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MITSUBISHI MITSUBISHI
PM50RSD120 PM50RSD120
FLAT-BASE TYPE FLAT-BASE TYPE INSULATED PACKAGE INSULATED PACKAGE
PM50RSD120
FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package compatibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM. * 3 50A, 1200V Current-sense IGBT for 15kHz switching * 15A, 1200V Current-sense regenerative brake IGBT * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices) * Acoustic noise-less 5.5/7.5kW class inverter application * UL Recognized Yellow Card No.E80276(N) File No.E80271
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APPLICATION General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
17.02 3.22
3-2
10
1101 950.5 3-2 3-2 10
10
6-2
Screwing depth Min9.0 4-5.5 MOUNTING HOLES
Terminal code
PBT
17
20
20.5
1234
567 8
9 11 10 12
13 15 17 19 14 16 18
1. 2. 3. 4. 5. 6. 7. 8. 9. 10.
VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO
11. 12. 13. 14. 15. 16. 17. 18. 19.
WP VWP1 VNC VN1 Br UN VN WN Fo
740.5 20
P
17.5
12 2.54
W
891
10
V
U
0.50.3 24.5 A 1926 66.44 0.5 2-2.54 26
4-R6 6-M5NUTS
21.2
3.22
3-2 0.5
11.6
1.6
A : DETAIL
32.6
31.6
LABEL
4
19.4
22
10.6
+1.0 22 -0.5
4.5
B N
Jul. 2005
MITSUBISHI
PM50RSD120
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Rfo=1.5k
WP Br Fo VNC WN VN1 VN UN VWPC VWP1 VP VVP1 UP VUP1 UFO WFO VFO VVPC VUPC
Rfo
Rfo
Rfo
Rfo
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Gnd In
Fo Vcc
Gnd In
Fo Vcc Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc Gnd In
Fo Vcc
Gnd
Si Out
Gnd
Si Out
Gnd
TEMP Si Out
Gnd
Si Out
Gnd
Si Out
Gnd
Si Out
Gnd
Si Out
Th
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C Ratings 1200 50 100 328 -20 ~ +150 Unit V A A W C
BRAKE PART
Symbol VCES IC ICP PC VR(DC) IF Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation FWDi Rated DC Reverse Voltage FWDi Forward Current Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C TC = 25C TC = 25C Ratings 1200 15 30 201 1200 15 -20 ~ +150 Unit V A A W V A C
CONTROL PART
Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN * VN * WN * Br-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals Ratings 20 20 20 20 Unit V V V mA
Jul. 2005
MITSUBISHI
PM50RSD120
FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM
Parameter Supply Voltage Protected by VCC(PROT) OC & SC VCC(surge) Supply Voltage (Surge) Module Case Operating TC Temperature Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125C Start Applied between : P-N, Surge value or without switching (Note-1) Ratings 800 1000 -20 ~ +100 -40 ~ +125 2500 Unit V V C C Vrms
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) www..com TC measurement point is as shown below. (Base plate depth 3mm)
PBT
THERMAL RESISTANCES
Symbol Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(j-c')Q Rth(j-c')F Rth(j-c')Q Rth(j-c')F Rth(c-f) Parameter Test Condition Inverter IGBT part (per 1 element), (Note-1) Inverter FWDi part (per 1 element), (Note-1) Brake IGBT part (Note-1) Brake FWDi part (Note-1) Inverter IGBT part (per 1 element), (Note-2) Inverter FWDi part (per 1 element), (Note-2) Brake IGBT part (Note-2) Brake FWDi part (Note-2) Case to fin, Thermal grease applied (per 1 module) Min. -- -- -- -- -- -- -- -- -- Limits Typ. -- -- -- -- -- -- -- -- -- Max. 0.38 0.70 0.62 1.33 0.23 0.36 0.40 0.77 0.027 Unit
Junction to case Thermal Resistances
Contact Thermal Resistance
(Note-2) TC measurement point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Test Condition VD = 15V, IC = 50A VCIN = 0V, Pulsed (Fig. 1) -IC = 50A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 15V0V VCC = 600V, IC = 50A Tj = 125C Inductive Load (upper and lower arm) VCE = VCES, VCIN = 15V (Fig. 4) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- 0.5 -- -- -- -- -- -- Limits Typ. 2.4 2.1 2.5 1.0 0.15 0.4 2.5 0.7 -- -- Max. 3.2 2.8 3.5 2.5 0.3 1.0 3.5 1.2 1 10 Unit V V
Switching Time
Collector-Emitter Cutoff Current
B P N
W V U
65mm
Tc
C/W
s
(Fig. 3) Tj = 25C Tj = 125C
mA
Jul. 2005
MITSUBISHI
PM50RSD120
FLAT-BASE TYPE INSULATED PACKAGE
BRAKE PART
Symbol VCE(sat) VFM ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Collector-Emitter Cutoff Current VD = 15V, IC = 15A VCIN = 0V, Pulsed IF = 15A VCE = VCES, VCIN = 15V Test Condition Tj = 25C Tj = 125C (Fig. 2) Tj = 25C Tj = 125C Min. -- -- -- -- -- Limits Typ. 2.5 2.2 2.5 -- -- Max. 3.3 3.2 3.5 1 10 Unit V V mA
(Fig. 1)
(Fig. 4)
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CONTROL PART
Symbol ID Vth(on) Vth(off) Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Test Condition VD = 15V, VCIN = 15V VN1-VNC VXP1-VXPC Min. -- -- 1.2 1.7 93 59 22 -- -- -- 111 -- 11.5 -- -- -- 1.0 Limits Typ. 44 13 1.5 2.0 157 -- -- 183 95 10 118 100 12.0 12.5 -- 10 1.8 Max. 60 18 1.8 2.3 -- -- -- -- -- -- 125 -- 12.5 -- 0.01 15 -- A s C V mA ms Unit mA V
Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Tj = 25C Inverter part VD = 15V (Fig. 5,6) Tj = 125C Break part -20 Tj 125C, VD = 15V (Fig. 5,6) Inverter part -20 Tj 125C, VD = 15V (Fig. 5,6) Brake part VD = 15V Base-plate Temperature detection, VD = 15V -20 Tj 125C VD = 15V, VFO = 15V VD = 15V (Fig. 5,6) Trip level Reset level Trip level Reset level (Note-3) (Note-3)
OC
Over Current Trip Level
A
SC toff(OC) OT OTr UV UVr IFO(H) IFO(L) tFO
Short Circuit Trip Level Over Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width output output output output output
(Note-3) Fault Fault Fault Fault Fault
is given only when the internal OC, SC, OT & UV protection. of OC, SC and UV protection operate by upper and lower arms. of OT protection operate by lower arm. of OC, SC protection given pulse. of OT, UV protection given pulse while over level.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol -- -- -- Parameter Mounting torque Mounting torque Weight Main terminal Mounting part -- Test Condition screw : M5 screw : M5 Min. 2.5 2.5 -- Limits Typ. 3.0 3.0 560 Max. 3.5 3.5 -- Unit N*m N*m g
RECOMMENDED CONDITIONS FOR USE
Symbol VCC VD VCIN(on) VCIN(off) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Test Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-4) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN * Br-VNC Using Application Circuit input signal of IPM, 3 sinusoidal PWM VVVF inverter (Fig. 8) For IPM's each input signals (Fig. 7) Recommended value 800 15 1.5 0.8 4.0 20 3.0 Unit V V V kHz s
(Note-4) Allowable Ripple rating of Control Voltage : dv/dt 5V/s, 2Vp-p Jul. 2005
MITSUBISHI
PM50RSD120
FLAT-BASE TYPE INSULATED PACKAGE
PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "OC" and "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
IN Fo IN Fo
P, (U,V,W)
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VCIN
(0V)
V
Ic
VCIN
(15V)
V
-Ic
VD (all)
U,V,W, (N)
VD (all)
U,V,W,B, (N)
Fig. 1 VCE(sat) Test a) Lower Arm Switching
P
Fig. 2 VEC, (VFM) Test
VCIN (15V) VCIN
Signal input (Upper Arm) Signal input (Lower Arm)
Fo
Fo
U,V,W
trr Irr
CS
VCE Ic 90%
Vcc 90%
N
b) Upper Arm Switching
VCIN Signal input (Upper Arm) Signal input (Lower Arm)
VD (all)
P
Ic VCIN
U,V,W
10%
10% tc (on)
10% tc (off)
10%
Fo
CS
Vcc
td (on)
tr
td (off)
tf
VCIN (15V)
Fo
(ton= td (on) + tr)
N
(toff= td (off) + tf)
VD (all)
Ic
Fig. 3 Switching time Test circuit and waveform
P, (U,V,W) A
IN Fo
VCIN
Pulse VCE
VCIN (15V)
Over Current
VD (all)
U,V,W, (N)
IC toff (OC) Constant Current
OC
Fig. 4 ICES Test
P, (U,V,W)
IN Fo
Short Circuit Current
VCC IC
Constant Current
VCIN
SC
VD (all)
U,V,W, (N)
IC
Fig. 5 OC and SC Test
Fig. 6 OC and SC Test waveform
P
VD VCINP U,V,W Vcc
VD VCINN N Ic VCINP 0V VCINN 0V t t
tdead
tdead
tdead
Fig. 7 Dead time measurement point example
Jul. 2005
MITSUBISHI
PM50RSD120
FLAT-BASE TYPE INSULATED PACKAGE
P
20k 10
VUP1 UFO UP VUPC Rfo
Vcc Fo In
OUT Si U
VD
IF
+ -
GND GND Vcc Fo In GND GND Vcc Fo
0.1
VVP1 VFO Rfo
OUT Si V
VD
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VP VVPC VWP1 WFO Rfo
M
OUT Si W
VD
20k
WP VWPC
In GND GND Vcc Fo OUT Si
IF
10
UN
0.1
In GND GND N TEMP Th
20k
IF
10
Vcc VN Fo In
OUT Si
0.1 20k
GND GND VN1
10
Vcc Fo In OUT Si B
VD
IF
WN
0.1 4.7k
VNC
GND GND Vcc
Br 5V
1k
Fo In Rfo
OUT Si
GND GND
Fo
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Quick opto-couplers: TPLH, TPLH 0.8s. Use High CMR type. The line between opto-coupler and intelligent module should be shortened as much as possible to minimize the floating capacitance. Slow switching opto-coupler: recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active. Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system.
* * * * * *
Jul. 2005
MITSUBISHI
PM50RSD120
FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES (Inverter Part)
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 3 2.5 2 1.5 1 0.5 0 VD = 15V
60 Tj = 25C
COLLECTOR CURRENT IC (A)
50 40 30 20 10 0
VD = 17V 15V 13V
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Tj = 25C Tj = 125C 0 10 20 30 40 50 60
0
0.5
1
1.5
2
2.5
3
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 3
SWITCHING TIME tc(on), tc(off) (s)
SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 VCC = 600V VD = 15V Tj = 25C Tj = 125C 2 Inductive load
7 5 4 3
2.5 2 1.5 1 0.5 0 12 IC = 50A Tj = 25C Tj = 125C 13 14 15 16 17 18
100
7 5 4 3 2
tc(off) tc(on) tc(off)
2 3 4 5 7 101 2 3 4 5 7 102
10-1 0 10
CONTROL SUPPLY VOLTAGE VD (V)
COLLECTOR CURRENT IC (A)
101
SWITCHING TIME ton, toff (s)
7 5 4 3 2
SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)
SWITCHING TIME CHARACTERISTICS (TYPICAL)
SWITCHING LOSS CHARACTERISTICS (TYPICAL) 101
7 5 4 3 2
ESW(off) ESW(on) ESW(on)
toff 100
7 5 4 3 2
ton VCC = 600V VD = 15V Tj = 25C Tj = 125C Inductive load
2 3 4 5 7 101 2 3 4 5 7 102
100
7 5 4 3 2
ESW(off)
10-1 0 10
10-1 0 10
VCC = 600V VD = 15V Tj = 25C Tj = 125C Inductive load
2 3 4 5 7 102
2
3 4 5 7 101
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
Jul. 2005
MITSUBISHI
PM50RSD120
FLAT-BASE TYPE INSULATED PACKAGE
COLLECTOR RECOVERY CURRENT -IC (A)
DIODE FORWARD CHARACTERISTICS (TYPICAL)
7 5 4 3 2
VD = 15V Tj = 25C Tj = 125C
REVERSE RECOVERY TIME trr (s)
102
7 5 4 3 2
Irr Irr trr
7 5 4 3 2
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101
7 5 4 3 2
10-1
7 5 4 3 2
trr VCC = 600V VD = 15V Tj = 25C Tj = 125C Inductive load
2 3 4 5 7 101 2
101
7 5 4 3 2
100
0
0.5
1
1.5
2
2.5
10-2 0 10
3 4 5 7 102
100
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR RECOVERY CURRENT -IC (A)
ID VS. fc CHARACTERISTICS (TYPICAL) 100
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) CIRCUIT CURRENT ID (mA)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) 101
7 5 3 2 7 5 3 2 7 5 3 2
VD = 15V Tj = 25C 80 N-side
100
60
10-1
40
20
10-2
P-side
0
0
5
10
15
20
25
10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s)
7 5 3 Single Pulse 2 Per unit base = Rth(j - c)Q = 0.38C/W
CARRIER FREQUENCY fc (kHz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) 101
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c)
7 5 3 2 7 5 3 2 7 5 3 2
100
10-1
10-2
10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s)
7 5 3 Single Pulse 2 Per unit base = Rth(j - c)F = 0.70C/W
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REVERSE RECOVERY CURRENT lrr (A)
DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 102
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PM50RSD120
FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES (Brake Part)
OUTPUT CHARACTERISTICS (TYPICAL) Tj = 25C
COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 3 2.5 2 1.5 1 0.5 0 VD = 15V Tj = 25C Tj = 125C 0 5 10 15 20
20
15
VD = 17V 15V
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10
13V
5
0
0
0.5
1
1.5
2
2.5
3
3.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR RECOVERY CURRENT -IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 3 2.5 2 1.5 1 0.5 0 12 IC = 15A Tj = 25C Tj = 125C 13 14 15 16 17 18
DIODE FORWARD CHARACTERISTICS (TYPICAL) 102
7 5 4 3 2
VD = 15V Tj = 25C Tj = 125C
101
7 5 4 3 2
100
0
0.5
1
1.5
2
2.5
CONTROL SUPPLY VOLTAGE VD (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) 101
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c)
7 5 3 2 7 5 3 2 7 5 3 2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) 101
7 5 3 2 7 5 3 2 7 5 3 2
100
100
10-1
10-1
10-2
10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s)
7 5 3 Single Pulse 2 Per unit base = Rth(j - c)Q = 0.62C/W
10-2
10-3 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s)
7 5 3 Single Pulse 2 Per unit base = Rth(j - c)F = 1.33C/W
Jul. 2005

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